2SB1151L データシートの表示（PDF） - Unisonic Technologies

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2SB1151L

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2SB1151

TYPICAL CHARACTERISTICS

PD - Ta

25

TC =Ta

20 INFINTE HEAT SINK

15

10

5

0

0

50 100 150 200 250

Ambient Temperature, Ta (℃)

PNP EPITAXIAL SILICON TRANSISTOR

160

140

120

100

80

60

40

20

0

0

dT - TC

Dissipation

S/b Limited

Limited

25 50 75 100 125 150 175 200

Case Temperature, TC (℃)

Safe Oerating Area

-10

-5

-3

-1

-0.5

IC

IC

(Pulse) MAX.

(D C )M AX.

DSis/sb2i0pLa0im1timo0itnesmd2Limsm*iste*d

-0.3

-0.1

* SINGLE NONREPETIVE

PULSED T a=25℃

CURVES MUST BE DERATED

LINERLY WITH INCREASE

IN TEMPERATURE

-1

-3 -5 -10

-30 -50 -100

Collector-Emitter Voltage, VCE（V）

Reverse Bias Safe Operating Area

-10

-8

-6

-4

VCEO (SUS)

-2

0

-20 -40 -60 -80 -100

Collector-Emitter Voltage, VCE（V）

-10

-8

-6

-4

-2

0

IC - VCE

I B=-1I5B=0m-1A00mI BA=-80mIBA=-60mA

IB=-40mA

IB=-30mA

IB=-20mA

IB=-10mA

IB=0mA

-0.4 -0.8 -1.2 -1.6 -2.0

Collector-Emitter Voltage, VCE（V）

hFE - IC

1K

500

300

VCE=-2V

100

50

VCE=-1V

30

10

5

3

1

-0.01 -0.03 -0.1 -0.3 -1

-3 -10

CollectorCurrent, IC (A)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3

QW-R204-022,A

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