2SB1075 データシートの表示（PDF） - SavantIC Semiconductor

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2SB1075

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1075

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-2mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ;IE=0

VCEsat

VBEsat

Collector-emitter saturation voltage IC=-3.0A; IB=-0.3A*2

Base-emitter saturation voltage

IC=-2.0A ;IB=-0.2A*2

ICBO

Collector cut-off current

VCB=-50V; IE=0

ICEO

Collector cut-off current

VCE=-10V; IE=0

IEBO

Emitter cut-off current

hFE

DC current gain

fT

Transition frequency

COB

Collector output capacitance

VEB=-5V; IC=0

IC=-1A ; VCE=-5V*2

IC=-0.5A ; VCE=-5V*2

IE=0; f=1MHz ; VCB=-20V

MIN TYP. MAX UNIT

-40

V

-50

V

-1.0

V

-1.5

V

-1

µA

-100 µA

-10

µA

50

220

150

MHz

40

pF

Note: *2 pulse test

hFE Classifications

P

Q

R

50-100

80-160

120-220

2

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