2SB1149 データシートの表示（PDF） - Quanzhou Jinmei Electronic
部品番号
コンポーネント説明
メーカー
2SB1149 Datasheet PDF : 3 Pages
| |||
JMnic
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For use in operating from IC without
predriver ,such as hammer driver
PINNING(See Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current-peak
PD
Total power dissipation
Ta=25℃
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
Product Specification
2SB1149
VALUE
-100
-100
-8
-3.0
-5.0
1.3
15
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
Share Link: 