2SB1490 データシートの表示（PDF） - Panasonic Corporation

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2SB1490

Silicon PNP epitaxial planar type darlington

Panasonic Corporation 

2SB1490

PC  Ta

200

(1)TC=Ta

(2)With a 100×100×2mm

Al heat sink

(3)Without heat sink

(PC=3.5W)

150

100

(1)

50

(3)

(2)

0

0

40

80

120

160

Ambient temperature Ta (°C)

IC  VCE

−12

TC=25˚C

−10

IB=–5mA

−8

–1mA

–0.9mA

–0.8mA

−6

–0.7mA

–0.6mA

–0.5mA

−4

–0.4mA

–0.3mA

−2

–0.2mA

–0.1mA

0

0 −2 −4 −6 −8 −10 −12

Collector-emitter voltage VCE (V)

VCE(sat)  IC

−100

IC/IB=1000

−10

TC=100˚C

25˚C

–25˚C

−1

− 0.1

− 0.1

−1

−10

−100

Collector current IC (A)

−100

VBE(sat)  IC

IC/IB=1000

−10

TC=–25˚C

−1

100˚C

25˚C

hFE  IC

Cob  VCB

105

1 000

VCE=–5V

25˚C

IE=0

f=1MHz

TC=25˚C

TC=100˚C

104

–25˚C

100

103

10

102

− 0.1

− 0.1

−1

−10

−100

Collector current IC (A)

10

− 0.01

− 0.1

−1

−10

Collector current IC (A)

1

−1

−10

−100

Collector-base voltage VCB (V)

ton , tstg , tf  IC

100

Pulsed tw=1ms

Duty cycle=1%

IC/IB=1000

(–IB1=IB2)

10

VCC=–50V

TC=25˚C

tstg

tf

1 ton

0.1

Safe operation area

−100

Non repetitive pulse

TC=25˚C

ICP

−10

IC

t=10ms

t=1ms

−1

DC

− 0.1

0.01

0

−4

−8

−12

−16

Collector current IC (A)

− 0.01

−1

−10

−100

−1 000

Collector-emitter voltage VCE (V)

2

SJD00077BED

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