2SB1373 データシートの表示（PDF） - Inchange Semiconductor
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2SB1373 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1373
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB=B -0.8A
VBE(on) Base -Emitter On Voltage
IC= -8A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -8A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
60
200
20
15
MHz
400
pF
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
isc Website：www.iscsemi.cn
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