SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1490
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA
VBEsat
Base-emitter saturation voltage
IC=-6A ;IB=-6mA
ICBO
Collector cut-off current
VCB=-160V; IE=0
ICEO
Collector cut-off current
VCE=-140V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-6A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-6A ;IB1=-IB2=-6mA
VCC=-50V
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-100 µA
-100 µA
-100 µA
2000
5000
30000
20
MHz
1.0
µs
1.5
µs
1.2
µs
hFE-2 classifications
Q
P
5000-150000 8000-30000
2