2SB1430 データシートの表示（PDF） - Inchange Semiconductor
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2SB1430 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1430
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB=B -2mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB=B -2mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-1.5
V
-2.0
V
-1.0 μA
hFE-1
DC Current Gain
IC= -2A; VCE= -2V
2000
20000
hFE-2
DC Current Gain
IC= -4A; VCE= -2V
500
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V
80
MHz
COB
Output Capacitance
Switching Times
IE= 0; VCB= -10V; ftest= 1MHz
60
pF
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -2A, IB1= -IB2= -2mA,
VCC≈ -50V; RL= 25Ω
0.5
μs
1.0
μs
1.0
μs
hFE-1 Classifications
M
L
K
2000-5000 4000-10000 8000-20000
isc Website：www.iscsemi.cn
2
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