2SB1690TL データシートの表示（PDF） - ROHM Semiconductor
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2SB1690TL Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristic curves
1000
Ta=100°C
VCE=−2V
PULSED
25°C
−40°C
100
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
2SB1690
10
1
0.1
Ta=100°C
25°C
−40°C
0.01
−40°C
25°C
Ta=100°C
IC/IB=20
PULSED
1
0.1
0.01
IC/IB=50/1
IC/IB=20/1
IC/IB=10/1
Ta=25°C
PULSED
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs.collector current
0.001
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
Ta=100°C
25°C
−40°C
0.1
0.01
VCE=−2V
PULSED
1000
100
Ta=25°C
VCE=−2V
f=100MHz
1000
100
10
IC=20 IB1=-20IB2
Ta=25°C
tstg f=100MHz
tr
tf
tdon
0.001
0
0.5
1
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
10
0.001
0.01
0.1
1
10
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Switching time
1000
cib
100
cob
Ta=25°C
IE=0mA
f=1MHz
10
0.1
1
10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
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