2SB1550 データシートの表示（PDF） - Inchange Semiconductor

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2SB1550

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0

V(BR)CBO Collector-base breakdown voltage IC=-0.1mA, IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-2mA, IC=0

VCEsat Collector-emitter saturation voltage IC=-5A ,IB=B -20mA

VBEsat Base-emitter saturation voltage

IC=-5A ,IB=B -20mA

ICBO

Collector cut-off current

VCB=-80V, IE=0

IEBO

Emitter cut-off current

VEB=-5V, IC=0

hFE

DC current gain

IC=-5A ; VCE=-3V

Product Specification

2SB1550

MIN TYP. MAX UNIT

-80

V

-80

V

-5

V

-2.0

V

-2.5

V

-10

μA

-2

mA

1000

20000

2

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