2SB550 データシートの表示（PDF） - SavantIC Semiconductor
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2SB550 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB550
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=-80V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
IC=-0.1A ; VCE=-10V
MIN TYP. MAX UNIT
-100
V
-70
V
-5
V
-1.0
V
-1.5
V
-0.1 mA
-0.1 mA
30
200
5
MHz
2
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