2SB1604A データシートの表示（PDF） - Inchange Semiconductor
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2SB1604A Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1604 2SB1604A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SB1604
2SB1604A
IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-0.33A
VBEsat Base-emitter saturation voltage
IC=-10A ;IB=-0.33A
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-10V
Switching times
ton
Turn-on time
tstg
Storage time
IC=-3A; IB1=-IB2=-0.1A
tf
Fall time
MIN TYP. MAX UNIT
-20
V
-40
-0.6
V
-1.5
V
-50
μA
-50
μA
45
90
260
400
pF
100
MHz
0.1
μs
0.5
μs
0.1
μs
hFE-2 Classifications
Q
P
90-180
130-260
2
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