2SB656B データシートの表示（PDF） - Inchange Semiconductor

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2SB656B

HIGH POWER AMPLIFIER APPLICATION

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

2SB656

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB=B -0.6A

VBE(on) Base-Emitter On Voltage

IC= -1A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

hFE-2

DC Current Gain

IC= -6A; VCE= -5V

fT

Current-Gain—Bandwidth Product

IC= -1A; VCE= -5V

MIN TYP. MAX UNIT

-160

V

-5

V

-2.5

V

-1.5

V

-0.1 mA

60

200

20

22

MHz

‹ hFE Classifications

B

C

60-120 100-200

isc Website：www.iscsemi.cn

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