2SB696 データシートの表示（PDF） - Inchange Semiconductor
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2SB696 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2SB696
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SD732
APPLICATIONS
·Designed for AF power amplifier applications.
·Recommended for output stage of 60W power amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-8
A
ICM
Emitter Current-Peak
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-12
A
80
W
150
℃
-40~150 ℃
isc Website：www.iscsemi.cn
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