2SB772G-E-TN3-K(2011) データシートの表示（PDF） - Unisonic Technologies

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2SB772G-E-TN3-K
(Rev.:2011)

MEDIUM POWER LOW VOLTAGE TRANSISTOR

Unisonic Technologies 

2SB772

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (TA = 25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

IC

Pulse

ICP

-3

A

-7

A

Base Current

IB

-0.6

A

TO-92NL

0.5

Collector Dissipation

TO-126/TO-126C

PC

1

W

TO-251/TO-252

1

Junction Temperature

Storage Temperature

TJ

TSTG

+150

℃

-55 ~ +150

℃

Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA

PARAMETER

TO-126/ TO-126C

Junction to Case

TO-251/ TO-252

TO-92NL

SYMBOL

θJC

RATING

12.5

12.5

25

„ ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-Base Breakdown Voltage

BVCBO IC=-100μA, IE=0

-40

Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0

-30

Emitter-Base Breakdown Voltage

BVEBO IE=-100μA, IC=0

-5

Collector Cut-Off Current

ICBO VCB=-30V ,IE=0

Collector Cut-Off Current

ICEO VCE=-30V ,IB=0

Emitter Cut-Off Current

IEBO VEB=-3V, IC=0

DC Current Gain (Note 1)

hFE1 VCE=-2V, IC=-20mA

30

hFE2 VCE=-2V, IC=-1A

100

Collector-Emitter Saturation Voltage VCE(SAT) IC=-2A, IB=-0.2A

Base-Emitter Saturation Voltage

VBE(SAT) IC=-2A, IB=-0.2A

Current Gain Bandwidth Product

fT VCE=-5V, IC=-0.1A

Output Capacitance

COB VCB=-10V, IE=0,f=1MHz

Note 1: Pulse test: PW<300μs, Duty Cycle<2%

„ CLASSIFICATION OF hFE2

RANK

RANGE

Q

100 ~ 200

P

160 ~ 320

UNIT

°C/W

TYP MAX UNIT

V

V

V

-1000 nA

-1000 nA

-1000 nA

200

150 400

-0.3 -0.5

V

-1.0 -2.0

V

80

MHz

45

pF

E

200 ~ 400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R213-016,F

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