2SB765 データシートの表示（PDF） - Inchange Semiconductor

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2SB765

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB765

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -1.5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO = -120V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -1.5V(Max)@ IC= -1.5A

·Complement to Type 2SD864

APPLICATIONS

·Medium speed and power switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-3

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

-6

A

30

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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