B794 データシートの表示（PDF） - Inchange Semiconductor
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B794 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB794 2SB795
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
2SB794
-60
V(BR)CEO
Collector-emitter
breakdown voltage
IC=-10mA ;IB=0
V
2SB795
-80
VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-1mA
-1.5
V
VBEsat Base-emitter saturation voltage
IC=-1A ;IB=-1mA
-2.0
V
ICBO
Collector
cut-off current
2SB794 VCB=-60V; IE=0
2SB795 VCB=-80V; IE=0
-1.0
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0
mA
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
1000
hFE-2
DC current gain
IC=-1A ; VCE=-2V
2000
30000
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
0.5
μs
IC=-1.0A ; IB1=-IB2=-1.0mA
VCC=-50V;RL=50Ω
1.0
μs
1.0
μs
hFE-2 Classifications
M
L
K
2000-5000 4000-10000 8000-30000
2
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