2SB940A データシートの表示（PDF） - Inchange Semiconductor

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2SB940A

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB940,2SB940A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

2SB940

2SB940A

IC=-5mA ,IB=0

-150

V

-180

V(BR)CBO Collector-base breakdown voltage IC=-50μA ,IE=0

-200

V

V(BR)EBO Emitter-base breakdown voltage

IC=-500μA ,IC=0

-6

V

VCEsat Collector-emitter saturation voltage IC=-0.5A, IB=-50mA

-1.0

V

VBE

Base-emitter voltage

IC=-0.4A ; VCE=-10V

-1.0

V

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-50 μA

ICBO

Collector cut-off current

VCB=-200V; IE=0

-50 μA

体 hFE-1

固I电NC半H导ANGE SEMICONDUCTOR hFE-2

fT

DC current gain

DC current gain

Transition frequency

‹ hFE-1 Classifications

Q

P

IC=-0.15A ; VCE=-10V

IC=-0.4A ; VCE=-10V

IC=-0.5A; VCE=-10V,f=10MHz

60

240

50

30

MHz

60-140

100-240

2

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