2SB975 データシートの表示（PDF） - Inchange Semiconductor
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2SB975 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB975
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A, IB=B -3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A, IB=B -3mA
ICBO
Collector Cutoff Current
VCB= -100V, IE= 0
-1.5
V
-2.0
V
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
-5
mA
hFE-1
DC Current Gain
IC= -3A; VCE= -2V
2000
15000
www.iscsemi.cn hFE-2
DC Current Gain
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -5A; VCE= -2V
500
0.5
RL= 16.7Ω, VCC≈ -50V
IC= -3A; IB1= -IB2= -3mA
1.0
1.0
μs
μs
μs
hFE-1 Classifications
M
L
K
2000-5000 3000-7000 5000-15000
isc Website：www.iscsemi.cn
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