2SB993 データシートの表示（PDF） - Inchange Semiconductor
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2SB993 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB993
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB=B -0.4A
ICBO
Collector Cutoff Current
VCB= -70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -1V
hFE-2
DC Current Gain
IC= -4A; VCE= -1V
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
Switching Times
IE= 0; VCB= -10V; ftest= 1MHz
IC= -1A; VCE= -4V
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
VCC= -30V, RL= 10Ω,
IB1= -IB2= -0.3A,
hFE-1 Classifications
O
Y
70-140 120-240
MIN TYP. MAX UNIT
-50
V
-0.4 V
-1.2 V
-30 μA
-50 μA
70
240
30
250
pF
10
MHz
0.2
μs
2.5
μs
0.5
μs
isc Website：www.iscsemi.cn
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