2SC1185 データシートの表示（PDF） - Inchange Semiconductor
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2SC1185 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA
VBEsat Base-emitter saturation voltage
IC=500mA; IB=100mA
ICBO
Collector cut-off current
VCB=200V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.4A ; VCE=10V
Product Specification
2SC1185
MIN TYP. MAX UNIT
250
V
300
V
5
V
1.0
V
1.5
V
10
μA
10
μA
40
200
2
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