SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB980
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=-5mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
VBE
Base-emitter on voltage
IC=-1A;VCE=-5V
ICBO
Collector cut-off current
VCB=-120V IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-3A ; VCE=-5V
MIN TYP. MAX UNIT
-120
V
-120
V
-5
V
-2.0
V
-1.5
V
-50
µA
-50
µA
60
200
20
2