Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2246
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Power switching
·Power amplification
·power driver
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25℃)
导体 SYMBOL
PARAMETER
固I电NC半HANGE SEMICONDUCTOR VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
450
400
5
15
30
UNIT
V
V
V
A
A
IB
Base current
6
A
PT
Total power dissipation
Tmb=25℃
100
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance from junction to mounting base
VALUE
1.0
UNIT
℃/W