Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2246
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; L=25mH
400
V
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
1.2
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IC=6A ;IB=1.2A
VCB=450V; IE=0
TC=125℃
VCE=400V; IB=0
1.5
V
1
4
mA
5.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=6A ; VCE=5V
10
Switching times
固I电NC半H导A体NGE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A ;IB1=- IB2=1.2A
1.0
μs
2.0
μs
1.0
μs
2