C2305 データシートの表示（PDF） - Inchange Semiconductor
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C2305 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1m A; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1m A; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Product Specification
2SC2305
MIN TYP. MAX UNIT
400
V
400
V
7
V
1.0
V
1.5
V
10
μA
10
μA
15
50
10
2
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