2SC3144 データシートの表示（PDF） - Inchange Semiconductor
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2SC3144 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
VCE(sat)-1 Collector-emitter saturation voltage IC=1.5A ,IB=3mA
VCE(sat)-2 Collector-emitter saturation voltage IC=1.5A ,IB=3mA
ICBO
Collector cut-off current
VCB=40V, IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1.5A ; VCE=2V
fT
Transition frequency
IC=1.5A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1A ;IB1=-IB2=2m A
RL=20Ω,VCC=20V
Product Specification
2SC3144
MIN TYP. MAX UNIT
60
V
70
V
0.9
1.5
V
2.0
V
0.1
mA
3.0
mA
2000
200
MHz
0.3
μs
1.2
μs
0.2
μs
2
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