2SC3421 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SC3421 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3421
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 120V(Min)
·Complement to Type 2SA1358
APPLICATIONS
·Designed for audio frequency power amplifier applications.
·Suitable for driver of 60 to 80 Watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
www.iscsemi.cn PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE UNIT
120
V
120
V
5
V
IC
Collector Current-Continuous
1
A
IBB
Base Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
0.1
A
10
W
1.5
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
Share Link: 