2SC3750 データシートの表示（PDF） - Inchange Semiconductor
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2SC3750 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.6A ; VCE=5V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.6A ; VCE=10V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=4A; IB1=0.8A;IB2=-1.6A
VCC=200V ,RL=50Ω
hFE-1 Classifications
L
M
N
15-30 20-40 30-50
Product Specification
2SC3750
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10 μA
10 μA
15
50
8
18
MHz
80
pF
0.5 μs
3.0 μs
0.3 μs
2
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