2SD1494 データシートの表示（PDF） - Inchange Semiconductor
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2SD1494 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1494
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 2.5A; IB= 0.8A
VCB= 600V; IE= 0
1.5
V
10 μA
tf
Fall Time
IC= 2.75A, IB1= 0.6A, IB2= -1.3A
1.0 μs
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