2SD1591 データシートの表示（PDF） - Inchange Semiconductor
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2SD1591 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=25mA
VBEsat Base-emitter saturation voltage
IC=10A; IB=25mA
ICBO
Collector cut-off current
VCB=100V; IE=0
ICEO
Collector cut-off current
VCE=100V; IE=0
IEBO
Emitter cut-off current
VEB=7V ;IC=0
hFE
DC current gain
IC=10A ; VCE=2V
Product Specification
2SD1591
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
10
μA
500 μA
5
mA
1000
30000
2
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