2SD1845 データシートの表示（PDF） - Inchange Semiconductor
部品番号
コンポーネント説明
メーカー
2SD1845 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1845
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 2A; IB=B 0.6A
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
VECF
C-E Diode Forward Voltage
Switching times, Resistive Load
IF= 2.5A
tstg
Storage Time
tf
Fall Time
IC= 2A; IB1= 0.6A; IB2= -1.2A;
VCC= 200V
MIN TYP. MAX UNIT
7
V
8.0
V
1.5
V
10 μA
1.0 mA
5
25
3.5
2
MHz
2.0
V
1.5
μs
0.2
μs
isc Website：www.iscsemi.cn
2
Share Link: 