2SD2023 データシートの表示（PDF） - Inchange Semiconductor
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2SD2023 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2023
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
60
V
V(BR)CBO Collector-base breakdown voltage
IC=50μA; IE=0
80
V
V(BR)EBO Emitter-base breakdown voltage
IE=50μA; IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
1.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A; IB=0.2A
VCB=60V; IE=0
VEB=5V; IC=0
1.5
V
10 μA
10 μA
hFE
DC current gain
固IN电C半H导AN体GE SEMICONDUTOR COB
Collector output capacitance
fT
Transition frequency
hFE Classifications
IC=1A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.5A ; VCE=5V
60
320
70
8
pF
MHz
D
E
F
60-120 100-200 160-320
2
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