2SD2526 データシートの表示（PDF） - Toshiba

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2SD2526

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)

Toshiba 

2SD2526

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)

2SD2526

High Power Switching Applications

Hammer Drive, Pulse Motor Drive Applications

Unit: mm

· High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)

· Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)

· Complementary to 2SB1641

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulse

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating

Unit

100

V

100

V

7

V

5

A

8

0.5

A

1.8

W

150

°C

−55 to 150

°C

Equivalent Circuit

BASE

COLLECTOR

≈ 5 kΩ

≈ 150 Ω

EMITTER

JEDEC

―

JEITA

―

TOSHIBA

2-10T1A

Weight: 1.5 g (typ.)

1

2003-02-04

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