2SD2391 データシートの表示（PDF） - ROHM Semiconductor

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2SD2391

Medium Power Transistor (60V, 2A)

ROHM Semiconductor 

Medium Power Transistor (60V, 2A)

2SD2391

Features

1) Low saturation voltage , typically

VCE (sat) =0.13V at IC / IB =1A /50mA.

2) Collector-emitter voltage =60V

3) Pc = 2W (on 40400.7mm ceramic board).

4) Complements the 2SB1561.

Dimensions (Unit : mm)

MPT3

4.5

1.6

1.5

(1)

(2)

(3)

0.4

0.4

0.5

0.4

(1)Base

1.5 1.5

3.0

(2)Collector

(3)Emitter

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

60

60

6

2

6

0.5

2

150

−55 to +150

∗1 Single pulse, Pw=10ms

∗2 When mounted on a 40+ 40+ 0.7mm ceramic board.

Unit

V

V

V

A

A ∗1

W

∗2

°C

°C

Electrical characteristics (Ta=25C)

Parameter

Symbol

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

∗ Measured using pulse current

BVCBO

BVCEO

BVEBO

ICBO

IEBO

VCE(sat)

hFE1

hFE2

fT

Cob

Min.

Typ.

Max.

Unit

Conditions

60

−

−

V

IC=50μA

60

−

−

V

IC=1mA

6

−

−

V

IE=50μA

−

−

0.1

μA VCB=50V

−

−

0.1

μA VEB=5V

−

0.13

0.35

V

IC/IB=1A/50mA

∗

120

−

270

−

VCE/IC=−2V/−0.5A

45

−

−

−

VCE/IC=−2V/−1.5A

−

210

−

MHz VCE=2V, IE=−0.5A, f=100MHz

∗

−

21

−

pF VCB=10V, IE=0A, f=1MHz

Packaging specifications and hFE

Type

2SD2391

Package

hFE

Marking

Code

Basic ordering unit (pieces)

∗Denotes hFE

MPT3

Q

DT∗

T100

1000

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

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