2SD468L-C-T92-K データシートの表示（PDF） - Unisonic Technologies
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2SD468L-C-T92-K Datasheet PDF : 4 Pages
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2SD468
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
25
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1
A
Collector Peak Current
ICP
1.5
A
Collector Power Dissipation
Junction Temperature
Storage Temperature
PC
0.9
W
TJ
+150
℃
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Gain Bandwidth Product
Collector Output Capacitance
Note: Pulse test
SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
BVCBO Ic=10µA, IE=0
25
V
BVCEO Ic=1mA, RBE=∞
20
V
BVEBO IE=10µA, IC=0
5
V
ICBO VCB=20V, IE=0
1
µA
hFE VCE=2V, Ic=0.5A (Note)
85
240
VCE(SAT) Ic=0.8A, IB=0.08A (Note)
0.2 0.5
V
VBE VCE=2V, Ic=0.5A (Note)
0.79
1
V
fT
VCE=2V, Ic=0.5A (Note)
190
MHz
Cob VCB=10V, IE=0, f=1MHz
22
pF
CLASSIFICATION OF hFE
RANK
RANGE
B
85 - 170
C
120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R211-003.B
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