SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD727
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
ICBO
Collector cut-off current
VCB=130V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
IE=0 ;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
130
V
5
V
2.5
V
0.1 mA
0.1 mA
60
200
20
7
MHz
110
pF
2