2SJ182 データシートの表示（PDF） - Hitachi -> Renesas Electronics

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2SJ182

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ181(L), 2SJ181(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

–600

V

±15

V

–0.5

A

–1.0

A

–0.5

A

20

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS –600

Gate to source breakdown

voltage

V(BR)GSS ±15

Gate to source leak current

I GSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–2.0

—

Forward transfer admittance |yfs|

0.3

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

–100

—

–4.0

15

25

0.45 —

220 —

55

—

13

—

7

—

20

—

35

—

35

—

–0.85 —

230 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±12 V, VDS = 0

VDS = –500 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –0.3 A, VGS = –10 V*1

ID = –0.3 A, VDS = –20 V*1

VDS = –10 V, VGS = 0,

f = 1 MHz

ID = –0.3 A, VGS = –10 V,

RL = 100 Ω

IF = –0.5 A, VGS = 0

IF = –0.5 A, VGS = 0,

diF/dt = 50 A/µs

2

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