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2SJ182S データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SJ182S
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ182S Datasheet PDF : 10 Pages
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2SJ181(L), 2SJ181(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
Pulse Test
–16
–12
I
D
= –0.5 A
–8
–4
–0.2 A
–0.1 A
0
–4 –8 12 –16 –20
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50
V
GS
= –10 V
20
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
V
GS
= –10 V
32
I
D
= –0.5 A
24
–0.2 A
–0.1 A
16
10
–15 V
8
5
–0.02 –0.05 –0.1 –0.2 –0.5 –1 –2
Drain Current I
D
(A)
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
4
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