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2SJ471 データシートの表示(PDF) - Hitachi -> Renesas Electronics
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コンポーネント説明
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2SJ471
Silicon P Channel DV–L MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ471 Datasheet PDF : 10 Pages
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5
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9
10
Reverse Drain Current vs.
Source to Drain Voltage
–50
Pulse Test
–40
–30
–10 V
–5 V
–20
V
GS
= 0, 5 V
–10
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
2SJ471
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25
°
C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10
µ
100
µ
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 4.17
°
C/W, Tc = 25
°
C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
7
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