2SK1104 データシートの表示（PDF） - Panasonic Corporation

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2SK1104

Silicon Junction FETs (Small Signal)

Panasonic Corporation 

Silicon Junction FETs (Small Signal)

2SK1104

Silicon N-Channel Junction FET

For switching

Complementary to 2SJ164

s Features

q Low ON-resistance

q Low-noise characteristics

s Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol Ratings

Unit

Gate to Drain voltage

VGDS

−65

V

Drain current

ID

20

mA

Gate current

IG

10

mA

Allowable power dissipation

PD

300

mW

Channel temperature

Storage temperature

Tch

150

°C

Tstg

−55 to +150

°C

4.0±0.2

unit: mm

marking

123

1.27 1.27

1: Source

2.54±0.15

2: Gate

3: Drain

EIAJ: SC-72

New S Type Package

s Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Drain to Source cut-off current IDSS*

Gate to Source leakage current IGSS

Gate to Drain voltage

VGDS

Gate to Source cut-off voltage VGSC

Forward transfer admittance

| Yfs |

Drain to Source ON-resistance RDS(on)

Input capacitance (Common Source) Ciss

Output capacitance (Common Source) Coss

Reverse transfer capacitance (Common Source) Crss

Conditions

VDS = 10V, VGS = 0

VGS = −30V, VDS = 0

IG = −10µA, VDS = 0

VDS = 10V, ID = 10µA

VDS = 10V, ID = 1mA, f = 1kHz

VDS = 10mV, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

min

typ

max

Unit

0.2

6

mA

−10

nA

−65

V

−1.5

−3.5

V

1.8

2.5

mS

250

Ω

7

pF

1.3

pF

1.5

pF

* IDSS rank classification

Runk

O

IDSS (mA)

0.2 to 1

P

0.6 to 1.5

Q

1 to 3

R

2.5 to 6

1

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