K1382 データシートの表示（PDF） - Toshiba

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K1382

FET/ Silicon N Channel MOS Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

2SK1382

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±20 V, VDS = 0 V

VDS = 100 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 4 V, ID = 30 A

VGS = 10 V, ID = 30 A

VDS = 10 V, ID = 30 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Min Typ. Max Unit

—

— ±100 nA

—

—

100 µA

100

—

—

V

0.8

—

2.0

V

—

20

29

mΩ

—

15

20

30

47

—

S

— 7000 —

—

400

—

pF

— 2700 —

—

16

—

Turn−on time

ton

Switching time

Fall time

tf

—

55

—

ns

—

80

—

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ 80 V, VGS = 10 V, ID = 60 A

Qgd

—

280

—

—

176

—

—

132

—

nC

—

44

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovered charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 60 A, VGS = 0 V

IDR = 60 A, VGS = 0 V

dIDR / dt = 50 A / µs

Min Typ. Max Unit

—

—

60

A

—

—

240

A

—

— −1.6

V

—

300

—

ns

— 0.75 —

µC

Marking

TOSHIBA

2SK1382

※

※ Lot Number

Type

Month (starting from alphabet A)

Year (last number of the christian era)

2

2002-09-04

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