2SK2423 データシートの表示（PDF） - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK2423 Datasheet PDF : 2 Pages
| |||
2SK2423
Silicon N Channel MOS FET
Application
High speed power switching
TO–220CFM
Features
• Low on–resistance
• High speed switching
• Low drive current
2
• No Secondary Breakdown
• Suitable for Switching regulator, DC – DC
1
converter.
3
12 3
1. Gate
2. Drain
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
450
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±30
V
———————————————————————————————————————————
Drain current
ID
7
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
28
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
7
A
———————————————————————————————————————————
Channel dissipation
Pch**
35
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
Share Link: 