2SK2423 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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2SK2423 Datasheet PDF : 2 Pages
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2SK2423
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS 450
—
voltage
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±30
—
—
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10 µA VGS = ±25 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
—
—
250 µA VDS =450 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state RDS(on)
—
0.55 0.7 Ω ID = 4 A
resistance
VGS = 10 V *
———————————————————————————————————————————
Forward transfer admittance |yfs|
4.5
7.0
—
S
ID = 4 A
VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
1150 —
pF VDS = 10 V
————————————————————————————————
Output capacitance
Coss
—
340
—
pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss
—
55
—
pF f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
17
—
ns ID = 4 A
————————————————————————————————
Rise time
tr
—
55
—
ns VGS = 10 V
————————————————————————————————
Turn–off delay time
td(off)
—
100
—
ns RL = 7.5Ω
————————————————————————————————
Fall time
tf
—
45
—
ns
———————————————————————————————————————————
Body–drain diode forward
VDF
voltage
—
0.9
—
V
IF = 7 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
trr
recovery time
—
330
—
ns IF = 7 A, VGS = 0,
diF / dt = 100 A / µs
———————————————————————————————————————————
* Pulse Test
See characteristics curves of 2SK1159.
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