K2736 データシートの表示（PDF） - Renesas Electronics

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K2736

Silicon N Channel DV-L MOS FET High Speed Power Switching

Renesas Electronics 

2SK2736

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A)

• 4 V gate drive devices.

• High speed switching

Outline

REJ03G1030-0200

(Previous: ADE-208-544)

Rev.2.00

Sep 07, 2005

RENESAS Package code: PRSS0003AE-A

(Package name: TO-220C•FM)

D

G

1. Gate

2. Drain

3. Source

12 3

S

Rev.2.00 Sep 07, 2005 page 1 of 6

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