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2SK3417 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3417 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
−
V
DS
5
Common source
15
6.25
Tc
=
25°C
Pulse test
4
6.5
10
6
3
5.75
2
5.5
5.25
1
VGS
=
5 V
0
0
4
8
12
16
20
Drain-source voltage V
DS
(V)
2SK3417
10
Common source
Tc
=
25°C
Pulse test
8
6
4
I
D
−
V
DS
15 10
7
6.5
6
5.5
2
VGS
=
5 V
0
0
10
20
30
40
50
Drain-source voltage V
DS
(V)
I
D
−
V
GS
10
Common source
VDS
=
20 V
Pulse test
8
6
100
4
2
Tc
=
25°C
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
V
DS
−
V
GS
20
Common source
Tc
=
25°C
Pulse test
16
12
ID
=
5 A
8
2.5
4
1.2
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
10
Common source
VDS
=
20 V
Pulse test
⎪
Y
fs
⎪ −
I
D
Tc
=
25°C
100
1
0.1
0.1
1
Drain current I
D
(A)
10
Common source
Tc
=
20 °C
Pulse test
5
R
DS (ON)
−
I
D
3
VGS
=
10 V
15
1
0.5
0.3
0.1
10
0.1
1
10
Drain current I
D
(A)
3
2006-11-06
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