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2SK3417 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
2SK3417
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
Toshiba
2SK3417 Datasheet PDF : 6 Pages
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2
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2SK3417
r
th
−
t
w
10
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
3.57°C/W
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse width t
w
(S)
Safe operating area
100
E
AS
– T
ch
200
30
ID max (pulsed)
*
10
ID max (continuous)
*
3
DC operation
Tc
=
25°C
1
100
μ
s
*
1 ms
*
0.3
0.1
*
Single nonrepetitive pulse
Tc
=
25°C
0.03
Curves must be derated linearly
with increase in temperature.
0.01
1
10
VDSS max
100
Drain-source voltage V
DS
(V)
1000
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
12.2 mH
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-11-06
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