K3844(2006) データシートの表示（PDF） - Toshiba
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K3844 Datasheet PDF : 6 Pages
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2SK3844
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
μA
IDSS
VDS = 60 V, VGS = 0 V
⎯
⎯
100
μA
V (BR) DSS ID = 10 mA, VGS = 0 V
60
⎯
⎯
V
V (BR) DSX ID = 10 mA, VGS = −20 V
35
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
RDS (ON) VGS = 10 V, ID = 23 A
⎯
4.1
5.8 mΩ
|Yfs|
VDS = 10 V, ID = 23 A
32
63
⎯
S
Ciss
⎯ 12400 ⎯
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯
700
⎯
pF
Coss
⎯ 1100 ⎯
tr
VGS 10 V
0V
ID = 23 A
⎯
18
⎯
VOUT
ton
⎯
45
⎯
ns
tf
VDD ∼− 30 V
⎯
35
⎯
toff
Duty <= 1%, tw = 10 μs
⎯
200
⎯
Qg
⎯
196
⎯
Qgs
VDD ∼− 48 V, VGS = 10 V,ID = 45 A
⎯
148
⎯
nC
Qgd
⎯
48
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR1
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 45 A, VGS = 0 V
IDR = 45 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯
⎯
45
A
⎯
⎯
180
A
⎯
⎯
−1.5
V
⎯
67
⎯
ns
⎯
70
⎯
nC
Marking
K3844
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
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