Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
K3844(2006) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
K3844
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
Toshiba
K3844 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
50
10 7 6 5.5
5.2
8
40
30
Common source
Tc
=
25°C
Pulse test
5
20
4.8
10
VGS
=
4.5 V
0
0
0.2
0.4
0.6
0.8
1.0
Drain
−
source voltage V
DS
(V)
2SK3844
100
10
8
80
I
D
– V
DS
7
6
5.7
5.5
Common Source
Tc
=
25°C
Pulse test
60
5.2
40
5
20
4.8
VGS
=
4.5 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain
−
source voltage V
DS
(V)
50
Common source
VDS
=
20 V
Pulse test
40
I
D
– V
GS
30
25
20
10
100
Tc
= −
55°C
0
0
2
4
6
8
Gate
−
source voltage V
GS
(V)
V
DS
– V
GS
1.0
Common source
Tc
=
25°C
Pulse test
0.8
0.6
0.4
0.2
45
ID
=
11 A
23
0
0
4
8
12
16
20
Gate
−
source voltage V
GS
(V)
1000
Common source
VDS
=
20 V
Pulse test
⎪
Y
fs
⎪ −
I
D
Tc
= −
55°C
100
25
100
10
R
DS (ON)
−
I
D
100
Common source
Tc
=
25°C
Pulse test
10
VGS
=
10, 15 V
1
1
10
100
Drain current I
D
(A)
1
1
10
100
Drain current I
D
(A)
3
2006-11-17
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]