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部品番号
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K3844(2006) データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
K3844
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
Toshiba
K3844 Datasheet PDF : 6 Pages
1
2
3
4
5
6
r
th
−
t
w
10
2SK3844
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
0.001
10
μ
100
μ
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
2.78°C/W
1m
10 m
100 m
1
10
Pulse width t
w
(s)
Safe operating area
1000
500
300
ID max (Pulse)
*
100
μ
s
*
100 ID max (Continuous)
1ms
*
30
10
DC Operation
Tc
=
25°C
5
3
1
*
Single nonrepetitive pulse
0.5
Tc
=
25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
1
VDSS max
10
100
Drain
−
source voltage V
DS
(V)
E
AS
– T
ch
600
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
0V
B
VDSS
I
AR
V
DD
V
DS
Test circuit
R
G
=
25
Ω
V
DD
=
25 V, L
=
353
μ
H
Wave form
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS
−
VDD
⎟⎟⎠⎞
5
2006-11-17
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