2STR2230 データシートの表示（PDF） - STMicroelectronics
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2STR2230 Datasheet PDF : 10 Pages
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Electrical characteristics
2STR2230
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4: Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Collector cut-off current
ICBO
(IE =0)
VCB = -30 V
Emitter cut-off current
IEBO
(IC =0)
VEB = -4 V
Collector-base
V(BR)CBO breakdown voltage
IC = -100 μA
-30
(IE = 0)
Collector-emitter
V(BR)CEO(1) breakdown voltage
IC = -10 mA
-30
(IB = 0)
Emitter-base
V(BR)EBO breakdown voltage (IC = IE = -100 μA
-5
0)
VCE(sat)(1)
Collector-emitter
saturation voltage
IC = -0.1 A, IB = -1 mA
IC = -1 A, IB = -100 mA
IC = -2 A, IB = -200 mA
VBE(sat)(1)
Base-emitter saturation
voltage
IC = -1 A, IB = -100 mA
hFE(1)
DC current gain
IC = -50 mA, VCE = -2 V
210
IC = -0.5 A, VCE= -2 V
170
IC = -1 A, VCE = -2 V
100
IC = -1.5 A , VCE = -2 V
70
IC= -0.1 A, VCE= -5 V
ft
Transition frequency
f = 100 MHz
100
CCBO
Collector-base
capacitance
IE = 0, VCB= -10 V
f = 1 MHz
ton
Turn-on time
toff
Turn-off time
Resistive load
IC = -1.5 A, VCC = -10 V
IB1 = -IB2 = -150 mA
Typ.
Max. Unit
-0.1
μA
-0.1
μA
V
V
V
-0.17
V
-0.25 -0.45
V
-0.42
-0.8
V
-0.9
-1.25
V
280
560
MHz
10
pF
74
ns
200
ns
Notes:
(1)Pulse test: pulse duration = 300 μs, duty cycle ≤ 1.5 %
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