NXP Semiconductors
74LVC1G17
Single Schmitt trigger buffer
10
ICC
(mA)
8
mna641
6
4
2
0
0
1
2
VI (V) 3
VCC = 3.0 V
Fig 9. Typical transfer characteristics
11. Dynamic characteristics
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 11.
Symbol Parameter
Conditions
−40 °C to +85 °C
Min Typ[1] Max
tpd
propagation delay A to Y; see Figure 10
[2]
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
1.0
4.1
11.0
0.7
2.8
6.5
VCC = 2.7 V
0.7
3.2
6.5
VCC = 3.0 V to 3.6 V
0.7
3.0
5.5
VCC = 4.5 V to 5.5 V
0.7
2.2
5.0
CPD
power dissipation VI = GND to VCC;
capacitance
VCC = 3.3 V
[3]
-
16.6
-
−40 °C to +125 °C Unit
Min
Max
1.0
14.0 ns
0.7
8.5 ns
0.7
8.5 ns
0.7
7.0 ns
0.7
6.5 ns
-
- pF
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2] tpd is the same as tPLH and tPHL.
[3] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) = sum of outputs.
74LVC1G17_6
Product data sheet
Rev. 06 — 27 August 2007
© NXP B.V. 2007. All rights reserved.
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